We report the structural and electrical properties of NiSi2 contact to n-type 4H-SiC. NiSi2 films are prepared by annealing the Ni and Si films separately deposited on (0001)-oriented 4H-SiC substrates with carrier concentrations (n) of 2 X 10(18) and 2 X 10(19) cm(-3). The deposited films are annealed at 900 degreesC for 10 min in a flow Ar gas containing 5 vol.% H-2 gas. NiSi2 contacts restrict the reaction between the contact and 4H-SiC substrate and NiSi2 contacts form the abrupt interface between the contact and 4H-SiC substrate. The specific contact resistances of NiSi2 contact to n-type 4H-SiC with n = 2 X 10(18) and 2 X 10(19) cm(-3) are estimated to be 2.7 and 1.9 X 10(-6) Ohmcm(2), respectively.