Materials Science Forum, Vol.389-3, 921-924, 2002
Schottky barriers for Pt on 6H-and 4H-SiC (0001), (000(1)over-bar), (1(1)over-bar00) and (1(2)over-bar10) faces measured by I-V, C-V and internal photoemission
Measurements of the Schottky barrier heights (SBH) of 4H and 6H SiC/Pt contacts reveal a dependence on the crystallographic face of the SiC epilayer.