We report on electronic properties of nitrogen-delta-doped SiC and propose its application for MOSFET. Delta-doping distributions with high peak concentrations (1 x 10(18) cm(-3)) and narrow distribution widths (12 nm) were advantageous for a high electron mobility. 4H-SiC delta-doped accumulation-channel MOSFET (DACFET) have been successfully fabricated. The effective channel mobility was higher than about 55 cm(2)/Vs. The channel mobility increases with decreasing the gate voltage because of the reduction of the surface scattering. The excellent channel mobility of 113 cm(2)/Vs was obtained at the gate voltage of 5 V.