Unusual hysteresis in transfer characteristics between forward (pinch-off voltage, V-P=-15 V) and reverse gate voltage sweeps (V-P=7 V) in n-channel depletion/accumulation-mode 4H-SiC MOSFETs is reported. A shift in the transfer characteristics towards more negative voltages is observed depending on the starting gate voltage and the direction of the gate voltage sweep. The hysteresis and shift in transfer characteristics axe related to changes in effective oxide charge resulting from changes in interface trap occupancy. Interface trap occupancy changes depending on the magnitude of the starting gate voltage and the direction of gate voltage sweep.