Materials Science Forum, Vol.389-3, 1097-1100, 2002
Radiation response of p-channel 6H-SiC MOSFETs fabricated using pyrogenic conditions
We present the first observation of total dose effects of gamma-ray irradiation on 6H-SiC p-channel MOSFETs. The transistors were irradiated using a Co-60 source to very high total dose levels. The electrical active defects created by irradiation change the components response.