Industrial production for Silicon carbide Schottky is iminent. Nevertheless, device performances and yields on wafers have to be improved to boost this production. The focus of present SiC material research is to establish the impact of structural substrate and epitaxial film quality on device performance. Substrate quality and reproducibility have been greatly improved and the size increased. As for the epitaxy, there is industrial equipment available for mass production. The high number of publications on reliable and efficient metallisation processes, powerful edge termination through localized implanted p-type zones and, the search for controlled and efficient passivation processes bears witness to the enhanced quality in Schottky devices. This paper reviews the recent progress made in the authors' laboratory.