This paper describes a study of the effect of material defects on SiC Schottky barrier diodes (SBDs). In this study we construct a detailed map of defects on a test wafer using SWBXT and EBIC, observe the electrical behavior of small diodes that are either defect free or contain a known defect, and determine the correlation between the observed electrical behavior and the presence of defects within the device. To within statistical error, we find no correlation between the studied defects and abnormal electrical characteristics. While these defects may impact device performance in other ways, they do not appear to prevent the manufacture of high-voltage low-leakage SiC SBDs.