The paper is focused on the discussion of unipolar switching devices suited for mass applications. The step to push SiC switches into commercial applications seems to be mandatory in order to get serious impact on material development and market acceptance of silicon carbide. It will be shown that currently, a MOSFET like switch for a blocking voltage above 1200V and a rated current of some amps is a potential candidate to provide the recommended driving force for a successful market entry. In detail, SiCED favors a combination of a silicon switch and a vertical, normally-on SiC junction field effect transistor. Several types of such devices will be presented and discussed. Additionally, an analysis will be given regarding the feasibility of bipolar switching devices with respect to their unipolar counterpart assuming identical blocking voltages.