The double implanted MOSFET (DIMOS) with the delta-doped layered structure channel, named the vertical DACFET, was fabricated on 4H-SiC(0001) substrate. The delta-doped layered structure channel was formed on the implanted P-well, and electrode annealing at 1000degreesC for 5min. was carried out after the MOS structure formation. The fabricated test device with channel length of 10 mu m, channel width of 2.1mm exhibited good current saturation and gate control. The saturated drain current at Vgs of 12V was measured to be18mA. The specific on resistance and the transconductance were calculated to be 110mOmega.cm(2) and 1mS/mm respectively, while the test device had packing channel density of 300cm/cm(2) and the channel length of 10 mum. The delta-doped layered structure channel exhibited high channel mobility of 180cm(2)/Vs in this vertical DACFET.