The forward blocking and conduction characteristics of 4H-SiC Trench Junction Field-Effect Transistors (JFETs) are simulated. The trench structure can help the depletion region to pinch off the conduction channel, thus turning off the device. The sidewall oxide can reduce the leakage current that is mainly due to generation in the space charge region. Devices with different aspect ratios are compared and optimized with analytical and numerical modeling. This JFET is projected to block as high as 1600V with a 12 mum epi (3mum deep trench), and has a specific on-resistance as low as 1.2mOmega-cm(2). A baseline fabrication process of this normally-on JFET is also presented.