This paper reports the design, fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 10 W, 200 A (pulsed) rating. A highly doped p-type epitaxial Anode layer and junction termination extension (JTE) were used in order to get good on-state and stable blocking characteristics. A forward voltage drop of less than 4.8 V was observed at 100 A/cm(2) in the entire 25 to 200degreesC temperature range. The reverse recovery characteristics show only a modest 110% increase in the peak reverse recovery current from 25degreesC to 200degreesC. Measurements at a forward current density of 220 A/cm(2) show that a dramatically low Q(Pi) of 3.8 muC is obtained in 4H-SiC rectifier at 200degreesC.