In this work, epitaxial and implanted SiC-PiN power diodes subjected to single high-density forward current pulses have been studied both experimentally and by means of computer simulations. The dynamic IV characteristics have been measured and simulated. The surface temperature have been measured with an IR microscope. Device degradation has been quantitatively studied as a function of dissipated power losses. Degradation in high quality epitaxial diodes can be clearly observed after 2000x 1 ms long 3000 AmpS/cm(2) current pulses (total dissipated energy 200 Joules) are applied to the diodes.