A novel MOS-gated bipolar transistor structure, which was demonstrated previously in silicon, consists of a MOSFET driving an npn bipolar junction transistor in a Darlington configuration (called MGT) is studied. In this paper, we have used commercial high-voltage silicon MOSFET driving high-voltage 4H-SiC BJT to form a hybrid MGT. The forward drop at 100A/cm(2) (similar to1.4A) is about 4V. The maximum current is similar to3A. At 100A/cm(2), the turn-off time is similar to2.0 mus which can be reduced to less than 0.5mus by using a 50V Si turn-off MOSFET. The hybrid MGT structure is a voltage-controlled device with good current-handling capability that circumvents the current MOS problems in 4H-SiC.