As detectors were used diode and triode structure, obtained by magnetron sputtering of Ni on surface n and p type 6H-SiC films, grown by sublimation epitaxy in vacuum. Investigation of the detector parameters diode structure shows that irradiation with 1000 MeV proton doses of similar to3(.)10(14) cm(-2) was initial stage of modification of SiC properties. In triode structure it was shown possibility signal amplification on the order of 50 times on short-range particles.