Gallium nitride metal-insulator-semiconductor capacitors have been fabricated using low-pressure chemical vapor deposited oxides on n-type GaN. Capacitance-voltage measurements show a larger hysteresis with low-temperature oxide (LTO) compared to hi.-h-temperature oxide (HTO). Using the conductance technique, an interface-state density of 8 x 10(10) to 9 x 10(11) cm(-2) eV(-1) was obtained for the GaN-HTO interface after an anneal at 1050degreesC for 30 seconds in N-2.