Materials Science Forum, Vol.394-3, 499-502, 2001
Sputter-deposited TiZrNi high-temperature shape-memory thin films
Ti35.7Zr14.9Ni49,4, Ti35.0Zr15.4Ni49.7 and Ti33.4Zr14.8Ni51.7 thin films were prepared using a carousel type magnetron sputtering apparatus. The films were annealed at 973K, 873K, and 773K for I hour in order to produce crystallization. The films with Ni-poor compositions have fine microstructures with a sub-micron order grain size and contain ternary TiZrNi (lambda(1)) precipitates with a MgZn2-type structure. The mechanical properties of the films were drastically improved, and the high temperature shape memory effects under tensile stress were realized. The Ti35.0Zr15.4Ni49.7 film annealed at 773K exhibits a nearly perfect shape memory effect even at 600MPa.