The surface-energy-induced selective growth affected by the interfacial segregation of sulfur has been investigated in ultra-thin grain-oriented 3% silicon-iron alloys with thickness of 40 gm and containing 6 or 90 ppm bulk content of sulfur. During accumulative final annealing, the sulfur segregated to the surface and showed a convex profile, meanwhile the kinetics of sulfur segregation corresponded inversely to the change in magnetic induction. With decreasing sulfur content and increasing H-2 flow rate, the convex profile of segregated sulfur was shifted to a shorter annealing time and the maximum in segregation concentration became lower. After final annealing, a higher magnetic induction was obtained in the lower bulk content of sulfur or at the higher flow rate of hydrogen. This is because the resultant lower concentration of surface-segregated sulfur shortens the time period of surface-energy-induced selective growth of {100} grains and thus makes the selective growth of surviving Goss grains easier within the time range of low segregated-sulfur concentration.