Effect of coincidence grain boundary on selective growth of secondary recrystallized Goss grain has been investigated by direct crystallographic measurement of Goss-primary matrix interface using electron backscattered diffraction (EBSD). The primary recrystallized specimens were partially secondary recrystallized by temperature gradient annealing to enhance the selectivity of grain growth. In this examination, the two orientation relationships were measured; (1) the orientation relationship between the Goss grain and the neighboring primary matrix grains along the periphery of the Goss grain and (2) the orientation relationship between the Goss grain and the primary matrix grains which are not adjoining the Goss grain. It was found that the frequency of low angle boundaries (S1 CSL boundaries) between the Goss grain and the neighboring primary matrix grains are higher than the expected values of random migration and that of near-S9 CSL boundaries (twice of misorientation due to the Brandon's criterion) are lower. These features suggest that low angle boundaries are immobile and near-S9 CSL boundaries are mobile during the selective growth of Goss grain in the secondary recrystallization. The mechanism of selective growth of secondary recrystallized Goss grain can be explained due to the preferential migration of near-S9 CSL boundaries in the presence of inhibitor.