Scratching and annealing of an Fe-2.8%Si single crystal resulted in recrystallization and grain growth in the neigbourhood of the notch. Misorientations between the grown grains and the single crystal matrix were measured and a frequency distribution of misorientation angles was used to investigate the possibility of selective growth based on misorientation. The misorientation angles used in the present analysis were those having an axis [uvw] nearest to one of the <110> variants. In order to take into consideration the texture before growth, the texture of the deformation affected zone near the scratch was measured. The misorientation profiles before and after growth were compared. It is concluded that the well-known selective growth phenomenon following the <110>26.5deg misorientation. relationship is supported by the orientation data.