3C-SiC was grown epitaxially on an "undulant-Si" substrate with countered slopes oriented in the [ I 10] and [ I 10] directions. Twinning domains in the (I 11) or (I 11) planes were annihilated by combining with counter-twinning domains, while those parallel to (I 11) or (I 11) self-vanished. The free-standing 3C-SiC exhibited remarkable anisotropy in its bending and electrical properties. The origin of these properties is discussed by considering the lattice structure around the twinning domain.