We present the experimental validating of a new bulk crystal growth concept, combining both HTCVD for the continuous feeding of the polycrystalline source and PVT for the ingot growth. Three concepts are demonstrated for this new process : 1) the indirect heating of the crucible, 2) the sublimation process in an open crucible and 3) the feeding of the source with SiC deposition from gaseous precursor simultaneously with the sublimation process. The growth of thick epitaxial layers is stable at high growth rate.