In a new reactor concept, with SiC feeding by CVD deposition and sublimation in a same crucible, the chemical vapor deposition on graphite plates and through a graphite foam was investigated. Presented results show the evolution of SiC deposition versus temperature on graphite plates and in the graphite foams used to separate the sublimation area from the deposition area. SiC obtained from tetramethylsilane decomposition is characterized by X-Ray diffraction and its distribution is investigated by mass measurements and microscopy.