Results of growth experiments using 4H-SiC seeds up to 35 mm in diameter are presented. A special set-up is used in order to initiate the comparison between different numerical approaches of sublimation growth and experimental results. First growth experiments on (000 (1) over bar) 4H silicon carbide seeds of different off-orientations show morphological features most probably induced by step bunching. In addition hollow defect formation at the surface was only found on layers grown on 8degrees off-oriented seeds.