Growth of 4H-SiC by low temperature LPE was studied in Al-Si melts. Some problems encountered during the growth are reviewed such as : local delayed wetting of the seed by the melt, morphological inhomogeneity, presence of alumina particles on the liquid, high reactivity of the melt with graphite at temperature above 1200degreesC, formation of crystallites on the surface at the cooling. Solutions are proposed to avoid or limit these problems when it is possible.