The p-type SiC layer was grown by sublimation epitaxy on the n-type substrate. Elementary boron was used for doping during the sublimation growth. Since a high growth rate can be achieved easily by sublimation epitaxy, the high-speed growth of p-type SiC layer was expected by sublimation epitaxy. It is necessary to control the carrier concentration for device applications. In order to control the carrier concentration, the growth temperature was changed. The carrier concentration was between 4.01x10(17)/cm(3) and 1.42x10(19)/cm(3) depending on the growth temperature. The growth rate was between 0.5 mum/h and 9.4 mum/h.