The hetero-epitaxial growth of 3C-SiC on reproducible carbonized Si(100) substrate was investigated with simultaneous supply Of C3H8 and SiH4. The films deposited at high flow rate of SiH4 become to be polycrystalline structure with smooth surface and void less reflecting high nucleation, whereas the films deposited at low flow rate of SiH4 become to be single crystalline structure with rough surface and high density of the void reflecting low nucleation. It is suggested that it is possible to obtain 3C-SiC single crystal even at a lower temperature than 1050degreesC.