We have developed a new technique for SiC heteroepitaxy on Si by means of supersonic free jets of C-60. The carbide synthesis can be achieved by the kinetic activation of the process. The electronic and structural properties of the film can be controlled by monitoring the beam parameters (flux and particle energy). SiC films were grown in Ultra High Vacuum on Si(l 11)7x7, at substrates temperatures of 800degreesC and 750degreesC, using two supersonic beams Of C-60 characterized by a particle energy of 5eV and 20eV. Surface electronic and structural characterisations were done both in-situ and the structural properties improved.