We have prepared an 8-inch wafer by the hybridization of 1.6-inch single crystalline 6H-SiC core and surrounding polycrystalline 3C-SiC. The hybrid wafer was fabricated by depositing the 3C-SiC around the 6H-SiC. Boundary between the 6H-SiC and the 3C-SiC was very smooth and tightly bonded. The polycrystalline 3C-SiC thus obtained has very high purity for semiconductor fields.