Scanning Capacitance Microscopy has been used to determine the carrier concentration profiles of N implanted 6H-SiC samples. The implantation dose and target temperature was chosen to avoid the formation of extended defects after annealing. Thermal treatments were performed directly in a conventional furnace with a low ramp rate (0.05degreesC/s) and with a high ramp rate (200 degreesC/s). When performing high ramp rate thermal processes before the conventional furnace a higher activation occurs.