Materials Science Forum, Vol.433-4, 379-382, 2002
Majority traps observed in H+- or He+-implanted Al-doped 6H-SiC by admittance and deep level transient spectroscopy
H+- or He+-implanted p-type (Al-doped) 6H-SiC epilayers are investigated by admittance and deep level transient spectroscopy. Several different defect centers (RE1/RE2, KR1, KR2, X1) are observed in the corresponding spectra. The thermal stability of these centers is investigated.
Keywords:admittance spectroscopy;Al-related centers;deep level transient spectroscopy;implantation-induced defects