N-type epitaxial 4H-SiC layers grown by a hotwall and a chimney CVD-reactor were investigated with respect to deep centers by deep level transient spectroscopy (DLTS) and capacitance-voltage (CV-) measurements. The DLTS-spectra contained two traps, the well know Z(1)-center with an energy level of 0.63 eV below the conduction band and a previously undetected deeper trap with an activation energy of 1.9 eV. The energy levels for both traps do not change with the applied reverse bias. It was found that the concentration of both traps, as well as the net doping concentration varies with the growth conditions.