We have investigated comparatively in situ and ion-implantation doped nitrogen 6H-SiC epilayers by Hall effect measurements in the temperature range 50K - 500K. The experimental temperature variations of the electron concentration and Hall mobility are described simultaneously using a model developed previously for 4H-SiC and calibrated to the case of 6H-SiC. The calibration was made using the sample data of a high quality lightly nitrogen doped 6H-SiC-epitaxial sample. The generalised collision time tensor for non-elastic scattering mechanisms was used to calculate the electron Hall mobility. A lower electron mobility and density appear for the implanted samples below 200K, which is attributed to the net doping level of the p-type starting material.