In this contribution we report on the defect formation and annealing of 4H SiC n-type epilayers implanted at room temperature with low fluence of MeV protons. The high energy protons will penetrate the entire epi layer and create an almost constant concentration of point defects. The fluence used is 1 x 10(12) cm(-2), which will create a concentration of primary silicon or carbon interstitials in the order of 1x10(14) cm(-3). Most of the primary defects will recombine, but a substantial fraction will survive or form more stable defect complexes. These secondary defects are probed by deep level transient spectroscopy (DLTS) in the temperature interval of 77 to 340 K.