In this work Deep Level Transient Spectroscopy (DLTS) is used to identify bandgap states of Er in Silicon Carbide (SiC). The samples were doped with Er by ion implantation followed by an annealing procedure. One donor-like implantation-induced bandgap state located at E-V + 0.75 (2) eV above the valence band edge is assigned to Er in the SiC crystals. A definite chemical correlation of this bandgap state to Er is achieved by using the radioactive isotope Er-160 as tracer. The decreasing concentration of this isotope during the nuclear transmutation to Dy-160 allows a unique attribution of the bandgap states induced by them.