We have succeeded in the activation of the ion-implanted nitrogen, for n-type dopant, and aluminum, for p-type dopant, in silicon carbide using excimer laser irradiation. The electrical activation efficiency of the dopants drastically improved while the substrate temperature was kept in the range of 500-800degreesC during laser irradiation. We have obtained very low sheet resitances R-s, namely 446Omega/square and 7.60kOmega/square, of the nitrogen and aluminum ion-implanted layer in 4H-SiC, respectively. These values, especially for the N+ ion implantation, are rather low than that of the furnace-annealed substrate.