Optical Emission Spectroscopy (OES) and Laser Interferometry (LI) were investigated as monitoring methods during Reactive Ion Etching (RIE) of hexagonal SiC in SF6/Ar gas mixtures. The etch rate and the surface roughness were monitored by LI, while at the same time OES monitored the intensity of the fluorine-related 704 nm line. It was found that the etch rate is directly related to the above intensity and not to the self-induced DC-bias. Etch rates higher than 400 nm/min were achieved for 400 W of RF power.