Materials Science Forum, Vol.433-4, 705-708, 2002
Schottky barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000(1)over-bar), (1(1)over-bar-00) and (1(2)over-bar-10) faces measured by I-V, C-V and internal photoemission
The Schottky barrier height of 4H and 6H SiC/Metal (Pt, Mo, Ti) contacts depends on the crystallographic face of the SiC epilayer. The breakdown fields of Schottky contacts without edge terminations are also discussed.