Lateral RESURF MOSFETs with stable and reversible breakdown at voltages as high as 1300-1400 V have been fabricated in 4H-SiC and 6H-SiC. 6H-SiC MOSFETs have specific on-resistance of 0.16 Omega-cm(2), lower than any reported lateral MOSFET with similar breakdown voltage in either silicon or SiC. Specific on-resistance of 4H-SiC MOSFETs is higher (0.9 Omega-cm(2)) due to a large contribution from the channel.