In this study, radiation response of p-channel 6H-SiC MOSFETs is investigated. The reduction in the saturation drain-source current is correlated to both simultaneous degradation of the channel mobility and an increase in the threshold voltage shift. Both the degradation of the channel mobility and shift in the threshold voltage are manifestation of the radiation-induced interface trap and oxide-trapped charge generation. A model was formulated to describe the degraded current-voltage characteristics of the MOSFET.