Buried-gate junction field-effect transistors (JFETs) have been fabricated in 4H polytype silicon carbide (SiC). The dynamic switching characteristics of the JFETs in a circuit with inductive load have been characterized. The drain voltage rise/fall time of similar to30 ns and 25 ns have been observed for turn-off and turn-on, respectively. The results have been compared to numerical mixed-mode circuit simulations with finite element structures.