Materials Science Forum, Vol.433-4, 789-791, 2002
Demonstration of monolithic Darlington transistors in 4H-SiC
The first monolithic, implanted-emitter, epi-base 4H-SiC Darlington transistor is demonstrated. The maximum common emitter current gain is above 80. The forward drop at 0.3A (similar to50A/cm(2)) is around 7.5V. The Darlington transistor exhibits negative temperature effect of current gain. The inter-stage isolation is achieved with trenches filled with oxide.