Four different Schottky diode edge terminations have been fabricated on 6H SiC. The metal contact was Ni2Si in all the structures and the epitaxial layer has a carrier concentrations of 3x10(15)cm(-3) and a thickness of 4 microns. With these characteristics of the epitaxial layer, the ideal breakdown voltages should be 800 V. In the best structure an edge efficiency of about the 95% has been reached. The comparison between the experimental and the simulated results shows that, when the breakdown is not influenced by defects present in the substrate, a good agreement with the simulation can be reached.