Lateral super junction diodes were fabricated using epitaxial multiple pn junction structures of 4H-SiC. The diodes showed very high on-state current densities of 500 A/cm(2) at 3.9 V and 1000 A/cm(2) at 5.0V were obtained, and the corresponding specific on-state resistance of 2.1 mOhmcm(2). Even without the aid of conductivity modulation, a specific on-state resistance of 4.2 mOhmcm(2) was obtained, showing an extremely low value as lateral devices. The maximum breakdown voltage of the diodes was 400 V, which is more than three times higher than the theoretical value calculated for a lateral p(+)n diode with a uniformly-doped drift region (130 V), indicating the effective operation of super junction structure made of SiC.