In the present work, the results of an experimental study of the forward dynamic IV characteristics of epitaxial and implanted SiC-PiN power diodes subjected to single forward high current density pulses are presented. Both sets of diodes share a similar set of design parameters. The forward dynamic IV characteristics have been measured as a function of current pulse length at constant peak current density (i.e. as a function of Joule power losses at constant peak free carrier density), and as a function of peak current density at constant current pulse length (i.e. with both peak free carrier density and temperature varying). The results obtained from these measurements have been compared among diodes of the same kind. In this way information on the effect of temperature increase alone and the combined effect of increasing temperature and free carrier concentration on the dynamic IV characteristics and on device degradation has been obtained. Furthermore, the results of measurements performed on epitaxial and implanted diodes have also been compared to each other, giving an insight on the effect these manufacturing techniques have on the forward dynamic IV characteristics and degradation properties of SiC-PiN power diodes.