A novel floating Junction Structure with a Schottky Barrier Diode based on 4H-SiC has been simulated using Technology Computer Aided Design (TCAD). This paper discusses the advantages of this structure in comparison with conventional and super-junction structures, the R-ons and V-br characteristics with varying structural parameters, and overcoming the SiC material limitation. The results show that R-ons is reduced by 66%, and it is proved that the breakthrough occurs at voltages between 4 and 10KV, at which the R-ons places in the gap between the bipolar and unipolar devices, by the utilization of a floating junction. The floating junction structure is simpler to fabricate than the super-junction structure and is a practical method to overcome the material limitations of 4H-SiC.