The influence of stacking faults (SFs) on I-V characteristics of 4H-SiC (11-20) Schottky barrier diodes (SBDs) fabricated on the epilayer grown on the substrate which was grown in [ 11-20] direction by sublimation method was investigated. The number of SF under the Schottky electrode was determined by KOH etching of (1-100) face cross-section. SFs were found to have severe influence on the leakage current of reverse characteristic. The leakage current is increased even though a few SFs exist under the electrode.