Thin nanocrystalline US and CdxZn1-xS films have been synthesized on InP(100), Si(100), GaAs (100), sapphire(100) and fused silica substrates at low pressure (5x10(-2) - 2x10(-1) Torr) and in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd(S2CN(C2H5)(2))(2)(Cl2H8N2)-Cl-. and Cd/Zn(S2CN(C2H5)(2))(2)(C10H8N2)-C-. as single-source precursors. The influence of deposition conditions and type of substrates on physical and chemical properties of these films has been studied by X-ray diffraction of synchrotron radiation, HREM, SEM, SAED, ellipsometry, IR- and Raman spectroscopies, and EDS.