The chemical and electrical characteristics of HfO2 dielectric layers grown on the p-type Si substrate by the metalorganic, molecular beam epitaxy (MOMBE) technique were investigated. The XPS spectra showed that the Hf 4f and O 1s peaks shifted to the higher level of binding energy due to the charge (1)transfer effect. Electrical properties were analyzed by C-V and I-V measurements. The distortion of C-V curve at depletion region is attributed to the effect of deep trap levels' existence. Saturation capacitance and leakage current density were in the range of 207 similar to 249 pF and 0.52 similar to 0.58 A/cm(2) respectively, and the flat band voltage shift to the higher voltage appeared as the oxygen flow rate increased.