This work deals with the preparation of seeded PZT(52/48) thin films on Pt/Ti/SiO2/Si substrates, utilizing PbTiO3 and BaTiO3. The comparison of the effect of the different types of perovskite crystalline seeds (BT, PT and PZT) on the perovskite phase crystallization, preferred orientation and electric properties of PZT thin films. The data show that phase formation process is less affected by the nature of the used seeds than the texture and electric response of the films. BT seeded films show higher dielectric constant than PZT and PT seeded films and are promising for dynamic random access memory applications, while the PZT ones show the superior ferroelectric properties, which are suitable for non-volatile ferroelectric random access memory applications.