In this paper, we suggest a model of facet formation during bulk SiC growth by Physical Vapor Transport (PVT). The model considers the step-flow growth, with the step density dependent on the local orientation of the crystallization front with respect to the close-packed crystal planes. The growth kinetics employs the Burton-Cabrera-Frank approach extended to binary compounds and a multi-component vapor. Being implemented into a 2D simulator, the model is applied to analysis of faceting in free-spreading bulk SiC growth. The computations predict the crystal shapes Fir very similar to those observed experimentally. The faceting influence on the overall crystal growth rate is discussed.